不间断电源中的IGBT关断过电压抑制
吴涛1，陈功1，曹志辉2
1 中国电建集团中南勘测设计研究院有限公司，湖南 长沙 410014； 2 广东电网公司韶关供电局，广东 韶关 512028
摘 要：由于电路中杂散电感及绝缘栅双极型晶体管(IGBT)反并联二极管浪涌电压的影响，IGBT在关断过程中会产生过电压尖峰。分析了IGBT关断过程，提出了一种由过电压采样电路和动态过电压抑制电路构成的有源IGBT过电压抑制电路方案，并对该方案进行仿真及实验，结果表明，该过电压抑制电路能有效抑制IGBT过电压产生，防止IGBT过电压损坏，提高了UPS电源的可靠性和工作效率。
关键词：不间断电源；杂散电感；绝缘栅双极型晶体管；过电压
中图分类号：TM464 文献标识码：A 文章编号：1007-3175(2015)12-0028-05
Research on Overvoltage During Switch-Off of Insulated Gate Bipolar Transistor in Uninterruptable Power Supply
WU Tao1, CHEN Gong1, CAO Zhi-hui2
1 Power China Zhongnan Engineering Corporation Limited, Changsha 410014, China; 2 Shaoguan Power Bureau of Guangdong Power Grid Company, Shaoguan 512028, China
Abstract: Because of the impacts of stay inductances and antiparallel diode surge voltage of insulated gate bipolar transistors (IGBTs) on circuits, overvoltage peak will turn up during the switch-off of IGBTs. This paper analyzed the switch-off process of IGBTs and proposed a kind of active IGBTs overvoltage suppression circuit scheme composed of an overvoltage sampling circuit and a dynamic overvoltage suppression circuit. The simulation and experiment results show that the overvoltage suppression circuit can suppress the overvoltage of IGBTs effectively and prevent IGBTs broken down, which raises the reliability of power supply and its working efficiency.
Key words: uninterruptable power supply; stay inductance; insulated gate bipolar transistor; overvoltage
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